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  Datasheet File OCR Text:
 NTE56 Silicon NPN Transistor High Gain Switch and Pass Regulator
Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO hFE VCE(sat) fT Test Conditions VCB = 100V VEB = 6V VCE = 4V, IC = 0.5A IC = 2A, IB = 50mA VCE = 12V, IE = -0.2A Min - - 80 500 - - Typ - - - - - 15 Max 10 100 - - 0.5 - V MHz Unit A A V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 25mA DC Current Gain Collector-Emitter Saturation Voltage Current Gain-Bandwidth Product
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max
.500 (12.7) Min .070 (1.78) Max
Base .100 (2.54)
Emitter Collector/Tab


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